2cl g 1 0 0kv/0. 2 a 2 00 ma 1 0 0kv 100 ns high voltage medium current standard rectifiers gete electronic co.,ltd http://www.getedz.com http://www.hvgtsemi.com e - mai: sales@getedz.com getai electronic device co.,ltd tel:0086 - 20 - 81 84 9628 fax:0086 - 20 - 8184 9638 2017 - 08 1 / 2 introduce : hvgt high voltage silicon rectifier a ssembly is made of high quality glass passivated chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers. f eatures: 1. high reliability design . 2. high voltage design . 3. h igh frequency . 4. conform to rohs . 5. epoxy resin molded in vacuumhave anticorrosion in the surface . a pplications: 1. high frequency switching power supply. 2. power supply of laser equipment . 3. general purpose high voltage rectifier . 4. other . mechanical data: 1. case : epoxy resin molding. 2. terminal: w elding axis . 3. net weight : 7.2 grams (approx) . shape display: s ize: (unit:mm) hvgt name : hv s - 0809 6 0h maximum ratings and characteristics : ( absolute maximum ratings ) items symbols condition data v alue units repetitive peak renerse voltage v rrm t a = 2 5c 1 0 0 kv average forward current maximum i favm t a = 40 c 2 00 m a suege current i fsm t a =25c ; h alf - s ine w ave ; 8.3 ms 6 .0 a junction temperature t j 1 25 c allowable operation case temperature tc - 40~+ 125 c storage temperature t stg - 40 ~ + 1 25 c electrical characteristics: t a =25c ( unless o therwise s pecified ) items symbols condition data value units maximum forward voltage drop v f at 25c ; at i f (av) 1 2 0 v maximum reverse current i r 1 at 25c ; at v rrm 2.0 ua i r 2 at 100c ; at v rrm 50 ua maximum reverse recovery time t rr a t 25c ; i f = 0.5i r ; i r = i favm ; i rr = 0. 25 i r 100 ns junction capacitance c j at 25c ; v r =0v ; f=1mhz -- pf
2cl g 1 0 0kv/0. 2 a 2 00 ma 1 0 0kv 100 ns high voltage medium current standard rectifiers gete electronic co.,ltd http://www.getedz.com http://www.hvgtsemi.com e - mai: sales@getedz.com getai electronic device co.,ltd tel:0086 - 20 - 81 84 9628 fax:0086 - 20 - 8184 9638 2017 - 08 2 / 2 fig 1 fig 2 forward current derating curve reverse recovery measurement waveform typical data capture points: i f =0.5i r , i r ,i rr =0.25i r fig 3 non - repetitive surge current cycles ( 5 0hz)
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